Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy

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dc.contributor.author Soundararajah, Q. Y.
dc.contributor.author Webster, R. F.
dc.date.accessioned 2019-08-08T09:35:14Z
dc.date.available 2019-08-08T09:35:14Z
dc.date.issued 2015
dc.identifier.uri http://www.digital.lib.esn.ac.lk/handle/123456789/3957
dc.description.abstract Transmission electron microscopy is used to examine the structure and composition of InxGa1−xN nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core–shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x 0.8 and the ratio of growth rates, shell:core, decreases with increasing In concentration. en_US
dc.language.iso en en_US
dc.publisher Semicond. Sci. Technol en_US
dc.subject III-nitrides en_US
dc.subject molecular beam epitaxy en_US
dc.subject characterization en_US
dc.subject nanostrutures en_US
dc.title Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy en_US
dc.type Article en_US
dc.identifier.sslno 02 en_US


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